Thermal conductance of thin silicon nanowires.

Calculation of Confined Phonon Spectrum in Narrow Silicon Nanowires Using the Valence Force Field Method

We study the effect of confinement on the phonon properties of ultra-narrow silicon nanowires of side sizes of 1 nm to 10 nm. We use the modified valence force field (MVFF) method to compute the phononic dispersion and extract the density of states, the transmission function, the sound velocity, the ballistic thermal conductance, and boundary-scattering-limited diffusive thermal conductivity. W...

Thermal conductance calculations of silicon nanowires: comparison with diamond nanowires

: We present phonon thermal conductance calculations for silicon nanowires (SiNWs) with diameters ranging from 1 to 5 nm with and without vacancy defects by the non-equilibrium Green's function technique using the interatomic Tersoff-Brenner potentials. For the comparison, we also present phonon thermal conductance calculations for diamond nanowires. For two types of vacancy defects in the SiNW...

Crossover to Quantized Thermal Conductance in Nanotubes and Nanowires

Using the non-equilibrium Green’s function techniques with interatomic potentials, we study the temperature dependence and the crossover of thermal conductance from the usual behavior proportional to the cross-sectional area at room temperature to the universal quantized behavior at low temperature for carbon nanotubes, silicon nanowires, and diamond nanowires. We find that this crossover of th...

Synthesis of large-area and aligned copper oxide nanowires from copper thin film on silicon substrate

Large-area and aligned copper oxide nanowires have been synthesized by thermal annealing of copper thin films deposited onto silicon substrate. The effects of the film deposition method, annealing temperature, film thickness, annealing gas, and patterning by photolithography are systematically investigated. Long and aligned nanowires can only be formed within a narrow temperature range from 400...

Tuning Lattice Thermal Conductance by Porosity Control in Ultrascaled Si and Ge Nanowires